Numerical simulation of perovskite solar cell with different material as electron transport layer using SCAPS-1D software

被引：21
作者：
Bhavsar, K. [1 ]
Lapsiwala, P. B. [2 ]
机构：
[1] VPMP Polytech, LDRP Campus, Gandhinagar, India
[2] Sarvajanik Coll Engn & Technol, Surat, Gujarat, India
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2021年 / 24卷 / 03期
关键词：
perovskite; solar cell; simulation; SCAPS-1D; power conversion efficiency; hole transport material; electron transport material; EFFICIENCY;
D O I：
10.15407/spqeo24.03.341
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Perovskite solar cells have become a hot topic in the solar energy device area due to high efficiency and low cost photovoltaic technology. However, their function is limited by expensive hole transport material (HTM) and high temperature process electron transport material (ETM) layer is common device structure. Numerical simulation is a crucial technique in deeply understanding the operational mechanisms of solar cells and structure optimization for different devices. In this paper, device modelling for different perovskite solar cell has been performed for different ETM layer, namely: TiO2, ZnO, SnO2, PCBM (phenyl-C61-butyric acid methyl ester), CdZnS, C-60, IGZO (indium gallium zinc oxide), WS2 and CdS and effect of band gap upon the power conversion efficiency of device as well as effect of absorber thickness have been examined. The SCAPS 1D (Solar Cell Capacitance Simulator) has been a tool used for numerical simulation of these devices.
引用
收藏
页码：341 / 347
页数：7
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