Heat-spreading diamond films for GaN-based high-power transistor devices

被引：64

作者：

Seelmann-Eggebert, M

Meisen, P

Schaudel, F

Koidl, P

Vescan, A

Leier, H

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] DaimlerChrysler Hochfrequenzelekt, D-89081 Ulm, Germany

来源：

关键词：

device modeling; nucleation; metal semiconductor field-effect transistor; (MESFET); processing;

D O I：

10.1016/S0925-9635(00)00562-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the potential of heat-spreading films with respect to improving the performance of thermally limited high-power high-frequency GaN-FET devices and report on successful diamond deposition on GaN-FETs. Detailed conditions for process compatibility with GaN-FET technology are discussed and shown to be satisfied by the low-temperature deposition process developed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：744 / 749

页数：6

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