Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches

被引:32
作者
Mar, A
Loubriel, GM
Zutavern, FJ
O'Malley, MW
Helgeson, WD
Brown, DJ
Hjalmarson, HP
Baca, AG
Thornton, RL
Donaldson, RD
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
diffusion; epitaxial growth; GaAs; lifetime; protoconductive switch;
D O I
10.1109/27.901223
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The longevity of high-gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible at much higher current levels than before. The inherent damage-free curl ent capacity of the bulk GaAs depends on the thickness of the doped layers and is at least 100 A for a dopant diffusion depth of 4 mum. This current could be increased by employing multiple switches connected in parallel, Thc contact metal has a different damage mechanism, and the threshold for damage (similar to 40-80 A) is not further improved beyond a dopant diffusion depth of about 2 mum. In a diffusion-doped contact sn itch, the switching performance is not degraded at the onset of contact metal erosion, unlike a switch with conventional contacts. For fireset applications operating at 1-kV/1-kA levels and higher, doped contacts have not yet resulted in improved longevity, We employ multifilament operation and InPb solder/Au ribbon wirebonding to demonstrate >100-shot lifetime at 1-kV/1-kA.
引用
收藏
页码:1507 / 1511
页数:5
相关论文
共 5 条
[1]  
Loubriel G. M., 1987, PROC 6 IEEE PULSED P, P145
[2]  
Mar A., 1999, Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), P303, DOI 10.1109/PPC.1999.825471
[3]  
SCOTTER S, 1993, J ASSOC PUBLIC ANAL, V29, P1
[4]   OPTOELECTRONIC DEVICE STRUCTURES FABRICATED BY IMPURITY INDUCED DISORDERING [J].
THORNTON, RL ;
BURNHAM, RD ;
PAOLI, TL ;
HOLONYAK, N ;
DEPPE, DG .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :621-628
[5]  
Zutavern F J, 1991, P 8 IEEE INT C PULS, P23