Immersion BARC for Hyper NA Applications II

被引：0

作者：

Huang, Yu-Chin ^{[1
]}

Chuang, Kai-Lin ^{[1
]}

Yeh, Tsung-Ju ^{[1
]}

Wu, Steven ^{[1
]}

Lin, Bill ^{[1
]}

Huang, Wen-Liang ^{[1
]}

Lu, Bo-Jou ^{[1
]}

Liu, E. T. ^{[1
]}

Yu, Chun Chi ^{[1
]}

Lin, Chaoyang ^{[2
]}

Yu, Jeong Yun ^{[2
]}

Prokopowicz, Greg ^{[2
]}

Kim, Sue Ryeon ^{[2
]}

Wong, Sabrina ^{[2
]}

Barclay, George ^{[2
]}

机构：

[1] United Microelect Corp, ATD Adv Modules, Adv Lithog Dept, Tainan 744, Taiwan

[2] Dow Chem Co USA, Dow Elect Mat, Marlborough, MA 01752 USA

来源：

OPTICAL MICROLITHOGRAPHY XXIII | 2010年 / 7640卷

关键词：

Immersion lithography; Reflectivity control; Substrate effect;

D O I：

10.1117/12.848454

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. A multilayer antireflectant system is required to control complex reflectivity resulting from various incident angles. In our previous works, we showed the successful optimization of multilayer antireflectant systems at hyper NA for BEOL layers. In this paper, we show the optimization of new multilayer bottom anti-reflectant systems to meet new process requirements at 28nm node Logic device. During the manufacturing process, rework process is necessary when critical dimension or overlay doesn't meet the specifications. Some substrates are sensitive to the rework process. As a result, litho performance including the line width roughness (LWR) could change. The optimizations have been done on various stack options to improve LWR. An immersion tool at 1.35NA was used to perform lithography tests. Simulation was performed using Prolith (TM) software.

引用

页数：8

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