Jeff=1/2 Mott-Insulating State in Rh and Ir Fluorides

被引:27
作者
Birol, Turan [1 ]
Haule, Kristjan [1 ]
机构
[1] Rutgers State Univ, Dept Phys & Astron, POB 849, Piscataway, NJ 08854 USA
基金
美国国家科学基金会;
关键词
HEXAFLUORIDOIRIDATE(IV);
D O I
10.1103/PhysRevLett.114.096403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Discovery of new transition metal compounds with large spin orbit coupling coexisting with strong electron-electron correlation among the d electrons is essential for understanding the physics that emerges from the interplay of these two effects. In this study, we predict a novel class of J(eff) = 1/2 Mott insulators in a family of fluoride compounds that are previously synthesized, but not characterized extensively. First principles calculations in the level of all electron density functional theory + dynamical mean field theory indicate that these compounds have large Mott gaps and some of them exhibit unprecedented proximity to the ideal, SU(2) symmetric J(eff) = 1/2 limit.
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页数:5
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