Synthesis and characterization of lead (IV) precursors and their conversion to PZT materials through a CVD process

被引:3
作者
Kim, Euk Hyun [1 ]
Moon, Cheong Won [2 ]
Lee, Jung Gyu [1 ]
Lah, Myoung Soo [3 ]
Koo, Sang Man [1 ,2 ]
机构
[1] Hanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Fuel Cells & Hydrogen Technol, Seoul 04763, South Korea
[3] UNIST, Dept Chem, Ulsan 44919, South Korea
关键词
Lead precursors; beta-Ketonate ligand; Silylamides; MOCVD process; PZT materials; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; LOW-TEMPERATURE; FABRICATION; GROWTH; MOCVD;
D O I
10.1016/j.poly.2019.114270
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
New Pb(IV) precursors for lead zirconate titanate (PZT) thin films were synthesized, and their solid-state structures were elucidated by single-crystal X-ray crystallography. First, tetraphenyl lead (Ph4Pb) was synthesized from the reaction of PbCl2 with the Grignard reagent, PhMgBr, by a published method. Two of the phenyl ligands in Ph4Pb were replaced by bromines, and then were substituted with bis (trimethylsilyl)amides (btsa) to yield Ph2Pb(btsa)(2) (1), or with 2,2.6,6-tetramethyl-3.5-heptadiketonate (thd) ligands to yield Ph2Pb(thd)(2) (2). Single crystals of these two new Pb(IV) precursors were obtained by recrystallization in hexane, and their chemical compositions were characterized by FT-IR and H-1 NMR. In TG analyses, both compounds exhibited sharp decomposition curves, with major mass losses in the region of 200-250 degrees C. PZT films were fabricated from one of the newly prepared Pb(IV) precursors by an MOCVD process involving Ti((OPr)-Pr-i)(4), and Zr(OPr)(4), and the development of the perovskite phase with temperature was monitored by an XRD method. (C) 2019 Elsevier Ltd. All rights reserved.
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页数:7
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