Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

被引：24
作者：
Lemberger, M
Paskaleva, A
Zürcher, S
Bauer, AJ
Frey, L
Ryssel, H
机构：
[1] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
[3] ETH Honggerberg, Surface Sci & Technol Lab, CH-8093 Zurich, Switzerland
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 5-6期
关键词：
D O I：
10.1016/j.microrel.2004.11.040
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present work, the potential of hafnium silicate (HfxSiyO2) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Thermally stable HfxSiyO2 films are deposited from a single-source MOCVD precursor. I-V and C-V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900 degrees C O-2-anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated. (c) 2004 Elsevier Ltd. All rights reserved.
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页码：819 / 822
页数：4
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