Adsorption of Ge nanowire with 3d transition metals A density-functional theory study

被引:7
作者
Pang, Qing [1 ]
Zhang, Yan [2 ]
Zhang, Jian-Min [1 ]
Xu, Ke-Wei [3 ]
机构
[1] Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
[2] Ecole Cent Paris, Lab SPMS, CNRS, UMR 8580, F-92295 Chatenay Malabry, France
[3] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Density functional theory calculations; Adsorption; Ge nanowire; Transition metals; TOTAL-ENERGY CALCULATIONS; EFFICIENCY;
D O I
10.1016/j.matchemphys.2010.08.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using density-functional theory calculations we investigate the energetic electronic and magnetic properties of 3d transition metals adsorption on hydrogen-passivated germanium nanowire along [0 01] direction It is found that most of the adatoms prefer to bind on the HH site while the Sc adatom prefers to the Top site The atoms of good conducting metals such as Cu and Zn form weak bonding with the wire however those such as Ti V Fe Co and Ni have relative larger binding energies In addition various types of wires can be obtained depending on the adatom species including nonmagnetic metals (Sc or Cu adsorption) and semiconductors (Ni or Zn adsorption) weak-ferromagnetic metals (Ti or V adsorption) ferromagnetic semiconductor (Cr adsorption) and more interesting the ferromagnetic half-metals (Mn Fe or Co adsorption) with 100% spin-polarization at the Fermi level These ferromagnetic wires should have potential applications in the fields of quasi-one-dimensional spintronics devices Detail analysis of the density of states indicates that the ferromagnetism originates mainly from spin-split of the TM-3d states Furthermore the effect of on-site Coulomb interaction on the stability of the three ferromagnetic half-metallic wires is also examined and It is found that the half-metallic ground state of Mn- or Co-adsorbed wire is more robust than that of Fe-adsorbed wire (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码:1113 / 1120
页数:8
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