Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

被引：165
|
作者：
David, Aurelien [1 ]
Grundmann, Michael J. [1 ]
机构：
[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期
关键词：
carrier lifetime; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors;
D O I：
10.1063/1.3462916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study differential carrier lifetimes in InGaN light-emitting diodes (LEDs) of varying wavelengths. Increase in wavelength is correlated with an increase in lifetime, due to the impact of the polarization fields on carrier overlap. This effect explains the early onset of droop in longer-wavelength LEDs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462916]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement
    Han, Dong-Pyo
    Shim, Jong-In
    Shin, Dong-Soo
    APPLIED PHYSICS EXPRESS, 2017, 10 (05)
  • [2] Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes
    Xue, Haotian
    Al Muyeed, Syed Ahmed
    Palmese, Elia
    Rogers, Daniel
    Song, Renbo
    Tansu, Nelson
    Wierer, Jonathan J.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2023, 59 (02)
  • [3] Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
    Han, Dong-Pyo
    Kim, Hyunsung
    Shim, Jong-In
    Shin, Dong-Soo
    Kim, Kyu-Sang
    APPLIED PHYSICS LETTERS, 2014, 105 (19)
  • [4] InGaN-based blue light-emitting diodes and laser diodes
    R and D Department, Nichia Chem. Indust., Ltd., 491 O., Tokushima, Japan
    J Cryst Growth, (290-295):
  • [5] Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes
    Yang, Yujue
    Ma, Ping
    Wei, Xuecheng
    Yan, Dan
    Wang, Yafang
    Zeng, Yiping
    JOURNAL OF LUMINESCENCE, 2014, 155 : 238 - 243
  • [6] InGaN-based blue light-emitting diodes and laser diodes
    Nakamura, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 290 - 295
  • [7] Confocal microphotoluminescence of InGaN-based light-emitting diodes
    Okamoto, K
    Kaneta, A
    Kawakami, Y
    Fujita, S
    Choi, J
    Terazima, M
    Mukai, T
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
  • [8] Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droop
    Jeong, Hyun
    Cho, Ga Hyun
    Jeong, Mun Seok
    JOURNAL OF LUMINESCENCE, 2022, 252
  • [9] Present status of InGaN-based light-emitting diodes and laser diodes
    Nagahama, S
    Iwasa, N
    Senoh, M
    Matsushita, T
    Sugimoto, Y
    Kiyoku, H
    Kozaki, T
    Sano, M
    Matsumura, H
    Umemoto, H
    Chocho, K
    Mukai, T
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 899 - 902
  • [10] InGaN-Based Light-Emitting Diodes With Nanoporous Microhole Structures
    Lin, Chia-Feng
    Chen, Kuei-Ting
    Lin, Chun-Min
    Yang, Chung-Chieh
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) : 1057 - 1059
12345