共 3 条
Pressure dependence of the energy gaps in AgGaSe2 and AgGaS2
被引:0
作者:
Gonzalez, J
[1
]
Power, C
Calderon, E
Chervin, JC
机构:
[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela
[2] Univ Paris 06, Phys Millieux Condenses UA782, F-75252 Paris 05, France
来源:
TERNARY AND MULTINARY COMPOUNDS
|
1998年
/
152卷
关键词:
D O I:
暂无
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
The optical absorption edge of AgGaSe2 and AgGaS2 single crystals was measured as a function of hydrostatic pressure up to 30 GPa. in a gasketed diamond anvil cell. Both materials have several structural phase transitions in this pressure range and it has been established that the orthorhombic and tetragonal phases of AgGaSe2 and AgGaS2 at 300 K are indirect gap semiconductors.
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页码:95 / 98
页数:4
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