High-speed 1.3 μm GaAs based internal photoemission resonant cavity enhanced photodetector

被引：0

作者：

Kimukin, I ^{[1
]}

Ozbay, E ^{[1
]}

Biyikli, N ^{[1
]}

Kartaloglu, T ^{[1
]}

Aytur, O ^{[1
]}

Tuttle, G ^{[1
]}

机构：

[1] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

来源：

LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 109

页数：2

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