Study on removal of shoulders at laser ablated indium tin oxide film edge

被引：8

作者：

Kim, Kwang Ho ^{[1
]}

Kwon, Sang Jik ^{[1
]}

Tak, Tae Oh ^{[2
]}

机构：

[1] Kyungwon Univ, Coll Elect & Elect Engn, Kyunggido 461701, South Korea

[2] Kangwon Natl Univ, Div Mech & Mechatron, Chunchon 200701, Kangwon, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 01期

关键词：

indium tin oxide; laser patterning; dipping;

D O I：

10.1143/JJAP.47.197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diode-pumped Q-switched Nd:YVO(4) laser (lambda = 1064 nm) was used for the fabrication of plasma display panel (PDP) bus electrodes. In the experiments, with the maskless laser direct patterning of indium tin oxide (ITO) films, the laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripplelike structure with the etched bottom compared with the chemically wet-etched ITO patterns. Using a Q-switched Nd:YVO(4) laser and a galvanometric scanning system, 500 mm/s with a 40 kHz repetition rate was found to be appropriate for application to PDP manufacturing. By dipping the laser-ablated ITO films in the chemical etching solution for 30 s at 50 degrees C, the shoulders were effectively removed without affecting the discharging properties of ac-PDP.

引用

页码：197 / 201

页数：5

共 14 条

[1] Recent applications of pulsed lasers in advanced materials processing [J].

Booth, HJ .

THIN SOLID FILMS, 2004, 453 :450-457

[2] Laser direct patterning of indium tin oxide layer for plasma display panel bus electrode [J].

Kim, Kwang Ho ;

Kwon, Sang Jik ;

Mok, Hyung Soo ;

Tak, Tae Oh .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A) :4282-4285

[3] Diode-pumped passively mode-locked Nd:YVO4 lasers with 40-GHz repetition rate [J].

Lecomte, S ;

Kalisch, M ;

Krainer, L ;

Spühler, GJ ;

Paschotta, R ;

Golling, M ;

Ebling, D ;

Ohgoh, T ;

Hayakawa, T ;

Pawlik, S ;

Schmidt, B ;

Keller, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (01) :45-52

[4]

LEE HC, 2005, SAE MULLI, V51, P336

[5]

LEE KC, 2000, T ELECT ELECT MAT, V1, P20

[6] INCREASE IN LASER REPETITION RATE BY SPECTRAL SELECTION [J].

SIZER, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (01) :97-103

[7] ATYPICAL CHARACTERISTICS OF KRF EXCIMER-LASER ABLATION OF INDIUM-TIN OXIDE-FILMS [J].

SZORENYI, T ;

KANTOR, Z ;

LAUDE, LD .

APPLIED SURFACE SCIENCE, 1995, 86 (1-4) :219-222

[8] MASKLESS PATTERNING OF INDIUM TIN OXIDE LAYER FOR FLAT-PANEL DISPLAYS BY DIODE-PUMPED NDYLF LASER IRRADIATION [J].

TAKAI, M ;

BOLLMANN, D ;

HABERGER, K .

APPLIED PHYSICS LETTERS, 1994, 64 (19) :2560-2562

[9] High-speed maskless laser patterning of thin films for giant microelectronics [J].

Yavas, O ;

Takai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B) :7131-7134

[10] Effect of substrate absorption on the efficiency of laser patterning of indium tin oxide thin films [J].

Yavas, O ;

Takai, M .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4207-4212

← 1 2 →