(Bi, Sb, Te, Se) alloys: Relationship between elaboration methods and applications

被引：9

作者：

Scherrer, H ^{[1
]}

Chitroub, M ^{[1
]}

Roche, C ^{[1
]}

Scherrer, S ^{[1
]}

机构：

[1] Ecole Mines, Phys Mat Lab, F-54042 Nancy, France

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740331

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We will recall briefly the thermoelectric datas on single crystals of Bi, Sb, Te, Se alloys grown by the travelling heater method. The crystalline quality of these single crystals will be characterized by X-ray topography (Synchrotron Beam). The observed dislocations are parallel to the cleavage plans with a density of 10(5)cm(-2). Other defects in relationship with the growth are also observed. The composition homogeneity of crystal is analysed by thermal probe. The quality of the single cyrstals permets us to do experiments of diffusion. We recall the results for the anisotropic diffusion coefficient of selenium in bismuth telluride along the solidus lien and we propose a mechanism of atomic diffusion. An important increasing of the growth rate until 40 mm by day gives materials with an excellent figure of merit (Zp = 3.10(-3)K(-1), Zn = 3.10(-3)K(-1)).

引用

页码：115 / 120

页数：6