Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

被引：80

作者：

Ortiz-Conde, A ^{[1
]}

García-Sánchez, FJ ^{[1
]}

Malobabic, S ^{[1
]}

机构：

[1] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080A, Venezuela

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期

关键词：

intrinsic channel; MOS compact modeling; symmetric DG MOSFET; undoped body MOS;

D O I：

10.1109/TED.2005.850629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOS-FETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.

引用

页码：1669 / 1672

页数：4

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