Resonant tunnelling and storage of electrons in si nanocrystals within a-SiNx/nc-Si/a-SiNx structures

被引：4

作者：

Wang Xiang ^{[1
,2
]}

Huang Jian ^{[1
,2
]}

Zhang Xian-Gao ^{[1
,2
]}

Ding Hong-Lin ^{[1
,2
]}

Yu Lin-Wei ^{[1
,2
]}

Huang Xin-Fan ^{[1
,2
]}

Li Wei ^{[1
,2
]}

Xu Jun ^{[1
,2
]}

Chen Kun-Ji ^{[1
,2
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 03期

关键词：

D O I：

10.1088/0256-307X/25/3/078

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx. sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour cleposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer cleposition technique. The thicknesses of tunnel and control SiNx. layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks clue to electrons tunnelling into the nc-Si clots and capacitance-voltage (C - V) hysteresis characteristic clue to electrons storage in the nc-Si clots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage (G - V) measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si clots via resonant tunnelling and can be stored in our a-SiNx/nc-Si/a-SiNx. structures.

引用

页码：1094 / 1097

页数：4

共 21 条

[1] Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films [J].