AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with high on/off current ratio of over 5 x 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator

被引：23

作者：

Tokuda, Hirokuni ^{[1
]}

Asubar, Joel T. ^{[1
]}

Kuzuhara, Masaaki ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

ATOMIC LAYER DEPOSITION; HEMTS; INTERFACE;

D O I：

10.7567/JJAP.55.120305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes DC characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with Al2O3 deposited by atomic layer deposition (ALD) as gate dielectric. Comparison was made for the samples deposited using ozone (O-3) or water as oxidant. The effect of pretreatment, where O-3 was solely supplied prior to depositing Al2O3, was also investigated. The MIS-HEMT with O-3 pretreatment and Al2O3 gate dielectric deposited using O-3 as the oxidant exhibited the most desirable characteristics with an excellent high on/off current ratio of 7.1 x 10(10), and a low sub-threshold swing (SS) of 73mV/dec. (C) 2016 The Japan Society of Applied Physics

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页数：4

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