Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology

被引：2

作者：

Onose, Hidekatsu ^{[1
,5
]}

Yamada, Renichi ^{[1
,5
]}

Mori, Mutsuhiro ^{[2
]}

Kobayashi, Yutaka ^{[3
]}

Onuki, Jin ^{[4
]}

机构：

[1] Hitachi Ltd, Ctr Technol Innovat, Elect Res & Dev Grp, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi Ltd, Ctr Technol Innovat, Elect Res & Dev Grp, Hitachi, Ibaraki 3191292, Japan

[3] Ibaraki Univ, Mat Sci & Engn, Hitachi, Ibaraki 3168511, Japan

[4] Ibaraki Univ, Grad Sch Sci & Engn, Hitachi, Ibaraki 3168511, Japan

[5] Hitachi Power Semicond Device Ltd, Hitachi, Ibaraki 3191221, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 10期

关键词：

EXTENSION;

D O I：

10.1149/2.0281610jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A graded junction termination extension (JTE) is proposed to suppress the variation of avalanche voltages for SiC power devices. A 7-zone JTE was investigated to realize the concept of the graded JTE. Avalanche voltages higher than 3,880 V were expected in the range of interface charge densities from 0 to 8.0 x 10(12) cm(-2). Both breakdown voltages higher than 4,000 V and bias stability after a 1,000 hr stress test were successfully achieved. (C) 2016 The Electrochemical Society. All rights reserved.

引用

页码：Q271 / Q273

页数：3

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