Topologically induced fractional Hall steps in the integer quantum Hall regime of MoS2

被引:3
作者
Islam, S. K. Firoz [1 ]
Benjamin, Colin [1 ]
机构
[1] Natl Inst Sci Educ & Res, Bhubaneswar 751005, Orissa, India
关键词
quantum Hall effect; spintronics; valleytronics; fractional step; VALLEY POLARIZATION; PHASE;
D O I
10.1088/0957-4484/27/38/385203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.
引用
收藏
页数:11
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共 34 条
  • [1] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [2] LINEAR RESPONSE THEORY REVISITED .3. ONE-BODY RESPONSE FORMULAS AND GENERALIZED BOLTZMANN EQUATIONS
    CHARBONNEAU, M
    VANVLIET, KM
    VASILOPOULOS, P
    [J]. JOURNAL OF MATHEMATICAL PHYSICS, 1982, 23 (02) : 318 - 336
  • [3] Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]
  • [4] Unconventional integer quantum Hall effect in graphene
    Gusynin, VP
    Sharapov, SG
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (14)
  • [5] Spintronics in MoS2 monolayer quantum wires
    Klinovaja, Jelena
    Loss, Daniel
    [J]. PHYSICAL REVIEW B, 2013, 88 (07)
  • [6] Monolayer MoS2: Trigonal warping, the Γ valley, and spin-orbit coupling effects
    Kormanyos, Andor
    Zolyomi, Viktor
    Drummond, Neil D.
    Rakyta, Peter
    Burkard, Guido
    Fal'ko, Vladimir I.
    [J]. PHYSICAL REVIEW B, 2013, 88 (04)
  • [7] Low-temperature photocarrier dynamics in monolayer MoS2
    Korn, T.
    Heydrich, S.
    Hirmer, M.
    Schmutzler, J.
    Schueller, C.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (10)
  • [8] Integer quantum Hall effect in gapped single-layer graphene
    Krstajic, P. M.
    Vasilopoulos, P.
    [J]. PHYSICAL REVIEW B, 2012, 86 (11):
  • [9] Electronic structure of two-dimensional crystals from ab initio theory
    Lebegue, S.
    Eriksson, O.
    [J]. PHYSICAL REVIEW B, 2009, 79 (11):
  • [10] Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer
    Li, Xiao
    Zhang, Fan
    Niu, Qian
    [J]. PHYSICAL REVIEW LETTERS, 2013, 110 (06)