Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System

被引:61
作者
Ding, Guanglong [1 ]
Chen, Ruo-Si [2 ,3 ]
Xie, Peng [3 ]
Yang, Baidong [2 ,3 ]
Shang, Gang [3 ]
Liu, Yang [3 ]
Gao, Lili [3 ]
Mo, Wen-Ai [2 ,3 ]
Zhou, Kui [1 ]
Han, Su-Ting [3 ]
Zhou, Ye [1 ]
机构
[1] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[3] Shenzhen Univ, Shenzhen Key Lab Flexible Memory Mat & Devices, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
device uniformity; diffusive memristors; reservoir computing; self-power mechano-nociceptor nociceptors; triboelectric nanogenerators; two-dimensional h-BN; MEMRISTIVE CROSSBAR ARRAYS; TOTAL-ENERGY CALCULATIONS; CONDUCTIVE FILAMENT; THIN-FILMS; CLASSIFICATION; SENSITIZATION; DEVICES; MEMORY;
D O I
10.1002/smll.202200185
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag+ between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed.
引用
收藏
页数:15
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