Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications

被引：45

作者：

Cai, Jiajun ^{[1
]}

Jie, Jiansheng ^{[1
]}

Jiang, Peng ^{[1
]}

Wu, Di ^{[2
]}

Xie, Chao ^{[1
]}

Wu, Chunyan ^{[1
]}

Wang, Zhi ^{[1
]}

Yu, Yongqiang ^{[1
,2
]}

Wang, Li ^{[1
]}

Zhang, Xiwei ^{[1
]}

Peng, Qiang ^{[1
]}

Jiang, Yang ^{[2
]}

机构：

[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China

[2] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2011年 / 13卷 / 32期

基金：

中国国家自然科学基金;

关键词：

WAVE-GUIDE; NANORIBBONS;

D O I：

10.1039/c1cp21104h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed based on the single CdS : Ga NW with high-kappa Si(3)N(4) dielectrics and top-gate geometries. In contrast to back-gate FETs, the MISFETs revealed a substantial improvement in device performance. Nano-light emitting diodes (nanoLEDs) were fabricated from the CdS : Ga NWs by using a n-NW/p(+)-Si substrate hybrid device structure. The nanoLEDs showed a bright yellow emission at a low forward bias. It is expected that the Ga-doped CdS NWs with controlled electrical transport properties will have important applications in nano-optoelectronic devices.

引用

页码：14663 / 14667

页数：5

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