Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

被引：81

作者：

Chung, Kunook ^{[1
,2
]}

Yoo, Hyobin ^{[3
]}

Hyun, Jerome K. ^{[4
]}

Oh, Hongseok ^{[1
,2
]}

Tchoe, Youngbin ^{[1
,2
]}

Lee, Keundong ^{[1
,2
]}

Baek, Hyeonjun ^{[1
,2
]}

Kim, Miyoung ^{[3
]}

Yi, Gyu-Chul ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Inst Appl Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151747, South Korea

[3] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea

[4] Ewha Womans Univ, Dept Chem & Nano Sci, Seoul 120750, South Korea

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 35期

基金：

新加坡国家研究基金会;

关键词：

HIGH-QUALITY; LOW-COST; FILMS; GROWTH; DEVICES; FABRICATION; DEPOSITION; NITRIDE; ARRAYS; LAYERS;

D O I：

10.1002/adma.201601894

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple liftoff technique, which works reliably under various bending conditions.

引用

页码：7688 / +

页数：8

共 35 条

[1] Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication [J].

Carlson, Andrew ;

Bowen, Audrey M. ;

Huang, Yonggang ;

Nuzzo, Ralph G. ;

Rogers, John A. .

ADVANCED MATERIALS, 2012, 24 (39) :5284-5318

[2] High-quality GaN films grown on chemical vapor-deposited graphene films [J].

Chung, Kunook ;

Park, Suk In ;

Baek, Hyeonjun ;

Chung, Jin-Seok ;

Yi, Gyu-Chul .

NPG ASIA MATERIALS, 2012, 4 :e24-e24

[3] Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices [J].

Chung, Kunook ;

Lee, Chul-Ho ;

Yi, Gyu-Chul .

SCIENCE, 2010, 330 (6004) :655-657

[4] Advances in the synthesis of InAs and GaAs nanowires for electronic applications [J].

Dayeh, Shadi A. ;

Soci, Cesare ;

Bao, Xin-Yu ;

Wang, Deli .

NANO TODAY, 2009, 4 (04) :347-358

[5]

Fan ZY, 2009, NAT MATER, V8, P648, DOI [10.1038/nmat2493, 10.1038/NMAT2493]

[6] Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition [J].

Fareed, RSQ ;

Yang, JW ;

Zhang, JP ;

Adivarahan, V ;

Chaturvedi, V ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2343-2345

[7] The path to ubiquitous and low-cost organic electronic appliances on plastic [J].

Forrest, SR .

NATURE, 2004, 428 (6986) :911-918

[8] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells [J].

Funato, M. ;

Hayashi, K. ;

Ueda, M. ;

Kawakami, Y. ;

Narukawa, Y. ;

Mukai, T. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[9] Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers [J].

Gupta, Priti ;

Rahman, A. A. ;

Hatui, Nirupam ;

Parmar, Jayesh B. ;

Chalke, Bhagyashree A. ;

Bapat, Rudheer D. ;

Purandare, S. C. ;

Deshmukh, Mandar M. ;

Bhattacharya, Arnab .

APPLIED PHYSICS LETTERS, 2013, 103 (18)

[10] FLEXIBLE LIGHT-EMITTING-DIODES MADE FROM SOLUBLE CONDUCTING POLYMERS [J].

GUSTAFSSON, G ;

CAO, Y ;

TREACY, GM ;

KLAVETTER, F ;

COLANERI, N ;

HEEGER, AJ .

NATURE, 1992, 357 (6378) :477-479

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