Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

被引：79

作者：

Chung, Kunook ^{[1
,2
]}

Yoo, Hyobin ^{[3
]}

Hyun, Jerome K. ^{[4
]}

Oh, Hongseok ^{[1
,2
]}

Tchoe, Youngbin ^{[1
,2
]}

Lee, Keundong ^{[1
,2
]}

Baek, Hyeonjun ^{[1
,2
]}

Kim, Miyoung ^{[3
]}

Yi, Gyu-Chul ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Inst Appl Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151747, South Korea

[3] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea

[4] Ewha Womans Univ, Dept Chem & Nano Sci, Seoul 120750, South Korea

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 35期

基金：

新加坡国家研究基金会;

关键词：

HIGH-QUALITY; LOW-COST; FILMS; GROWTH; DEVICES; FABRICATION; DEPOSITION; NITRIDE; ARRAYS; LAYERS;

D O I：

10.1002/adma.201601894

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple liftoff technique, which works reliably under various bending conditions.

引用

页码：7688 / +

页数：8

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