A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

被引：108

作者：

Sung, Woongje ^{[1
]}

Van Brunt, Edward ^{[1
]}

Baliga, B. J. ^{[1
]}

Huang, Alex Q. ^{[1
]}

机构：

[1] N Carolina State Univ, Future Renewable Elect Energy Delivery & Manageme, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

基金：

美国国家科学基金会;

关键词：

Edge termination; junction termination extension (JTE); PiN diode; 4H-SiC; POWER DEVICES; DIFFUSION; DIODES; BORON;

D O I：

10.1109/LED.2011.2144561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.

引用

页码：880 / 882

页数：3

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