A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices

被引：64

作者：

Gachovska, Tanya Kirilova ^{[1
]}

Tian, Bo ^{[1
]}

Hudgins, Jerry L. ^{[1
]}

Qiao, Wei ^{[1
]}

Donlon, John F. ^{[2
]}

机构：

[1] Univ Nebraska Lincoln, Dept Elect Engn, Lincoln, NE 68516 USA

[2] Powerex Inc, Youngwood, PA 15697 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2015年 / 51卷 / 04期

关键词：

Insulated-gate bipolar transistor (IGBT); junction temperature; resistance-capacitance (RC) thermal network; temperature-dependent RC model;

D O I：

10.1109/TIA.2015.2391438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A resistance-capacitance (RC) thermal network with temperature-dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of insulated-gate bipolar-transistor modules using a device model realized in Simulink. The collector current I-C, collector-emitter voltage V-CE, and the case temperature T-C measured during the cycling are used as input parameters of the proposed model. The proposed model is easier to implement compared with the thermosensitive electrical parameter (TSEP) method, and it is compared with an RC network with constant thermal conductivity and heat capacitance model and experimentally verified by using a TSEP method. The results of the proposed model show an improvement of the accuracy for determining the junction temperature compared with the model with constant thermal conductivity and heat capacitance.

引用

页码：3361 / 3367

页数：7

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