A comparative study of chemical-bath-deposited CdS, (Cd,Zn)S, ZnS, and In(OH)xSy buffer layer for CIS-based solar cells

被引：4

作者：

Huang, CH ^{[1
]}

Li, SS ^{[1
]}

Rieth, L ^{[1
]}

Halani, A ^{[1
]}

Fisher, ML ^{[1
]}

Song, JY ^{[1
]}

Anderson, TJ ^{[1
]}

Holloway, PH ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915961

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper a comparative study of CdS, (Cd,Zn)S, ZnS, and In(OH)(x)S-y buffer layers deposited by chemical bath deposition (CBD) has been made using X-ray Photoelectron Spectroscopy (XPS) analysis and J-V measurements.. J-V characteristics of the CIGS and CIGSS solar cells deposited with Cd-free alternative buffer layers were measured and compared with the cells deposited with CBD CdS buffer layers. The results show comparable performance among these cells, and further optimization of the deposition conditions should improve the performance of the cells deposited with alternative buffer layers.

引用

页码：696 / 699

页数：4

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