Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors

Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance AlOx film was developed at a relatively low annealing temperature of ⁓200 degrees C from its spin-coated precursor solution. Its application in both low-voltage n-as well as p-channel field-effect transistors (FETs) was demonstrated, gaining feedback on microstructure and dielectric properties by using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, as well as impedance and current-voltage measurements. The operating voltage of both nchannel FETs based on a semiconducting polymer as well as p-channel FETs with polymer-sorted semiconducting (6,5) single-walled carbon nanotube (s-SWCNT) networks was found to be within 1.5 V range. This work demonstrates the viability of low-temperature AlOx dielectrics in low-voltage carbon-based electronics towards low-power distributed, portable and wearable applications.