High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

被引：36

作者：

Cho, Chu-Young ^{[1
]}

Kwon, Min-Ki ^{[3
]}

Park, Il-Kyu ^{[4
,5
]}

Hong, Sang-Hyun ^{[1
]}

Kim, Jae-Joon ^{[2
]}

Park, Seong-Eun ^{[6
]}

Kim, Sung-Tae ^{[6
]}

Park, Seong-Ju ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[3] Chosun Univ, Dept Photon Engn, Kwangju 501759, South Korea

[4] Yeungnam Univ, LED IT Fus Technol Res Ctr, Gyeongbuk 712749, South Korea

[5] Yeungnam Univ, Dept Elect Engn, Gyeongbuk 712749, South Korea

[6] Samsung LED Co Ltd, Suwon 443743, South Korea

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 14期

关键词：

QUANTUM-WELLS;

D O I：

10.1364/OE.19.00A943

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED. (C) 2011 Optical Society of America

引用

页码：A943 / A948

页数：6

共 14 条

[11] The role of threading dislocations in the physical properties of GaN and its alloys
Speck, JS
Rosner, SJ
[J]. PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 24 - 32
[12] Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Takeuchi, T
Wetzel, C
Yamaguchi, S
Sakai, H
Amano, H
Akasaki, I
Kaneko, Y
Nakagawa, S
Yamaoka, Y
Yamada, N
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (12) : 1691 - 1693
[13] Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells
Wang, Y.
Pei, X. J.
Xing, Z. G.
Guo, L. W.
Jia, H. Q.
Chen, H.
Zhou, J. M.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[14] Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
Wang, YD
Zang, KY
Chua, SJ
Tripathy, S
Chen, P
Fonstad, CG
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3

← 1 2 →