Study of diffusion length in two-dimensional HgCdTe avalanche photodiodes by optical beam induced current

被引：6

作者：

Liu, MG ^{[1
]}

Wang, SL

Campbell, JC

Beck, JD

Wan, CF

Kinch, MA

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] DRS Infrared Technol, Dallas, TX 75374 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 07期

关键词：

This work is supported by DARPA through the Adaptable Focal Plane Array Program;

D O I：

10.1063/1.2060948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical beam induced current (OBIC) imaging has been used to measure the diffusion length of HgCdTe avalanche photodiodes (APDs) having a cylindrical structure. We show that the effective diffusion length extracted from current profiles is dependent on the electrode size and shape and the distance between electrode and excitation spot. To obtain the bulk diffusion length, a two-dimensional diffusion model was developed. The simulations provide good fits to experiment and indicate a bulk diffusion length of 70 mu m at room temperature. (c) 2005 American Institute of Physics.

引用

页数：4

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