Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

被引：27

作者：

Tiwari, Nidhi ^{[1
]}

Shieh, Han-Ping D.

Liu, Po-Tsun

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

来源：

MATERIALS LETTERS | 2015年 / 151卷

关键词：

Sputtering; Semiconductor; Thin films;

D O I：

10.1016/j.matlet.2015.03.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：53 / 56

页数：4

共 16 条

[1] Effect of Sheet Resistance and Morphology of ITO Thin Films on Polymer Solar Cell Characteristics [J].

Chauhan, Ram Narayan ;

Singh, C. ;

Anand, R. S. ;

Kumar, Jitendra .

INTERNATIONAL JOURNAL OF PHOTOENERGY, 2012, 2012

[2] Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies [J].

Chen, Charlene ;

Abe, Katsumi ;

Kumomi, Hideya ;

Kanicki, Jerzy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (06) :1177-1183

[3] Excimer laser crystallization of InGaZnO4 on SiO2 substrate [J].

Chen, Tao ;

Wu, Meng-Yue ;

Ishihara, Ryoichi ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo ;

Beenakker, C. I. M. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (11) :1694-1696

[4] CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].

FUJIMURA, N ;

NISHIHARA, T ;

GOTO, S ;

XU, JF ;

ITO, T .

JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279

[5] In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs [J].

Kim, Kyung Tae ;

Kim, Jaekyun ;

Kim, Yong-Hoon ;

Park, Sung Kyu .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) :850-852

[6] Bandgap Control of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3 [J].

Liu, Z. Q. ;

Lu, W. ;

Zeng, S. W. ;

Deng, J. W. ;

Huang, Z. ;

Li, C. J. ;

Motapothula, M. ;

Lu, W. M. ;

Sun, L. ;

Han, K. ;

Zhong, J. Q. ;

Yang, P. ;

Bao, N. N. ;

Chen, W. ;

Chen, J. S. ;

Feng, Y. P. ;

Coey, J. M. D. ;

Venkatesan, T. ;

Ariando .

ADVANCED MATERIALS INTERFACES, 2014, 1 (06)

[7] Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching [J].

Liu, Z. Q. ;

Leusink, D. P. ;

Lu, W. M. ;

Wang, X. ;

Yang, X. P. ;

Gopinadhan, K. ;

Lin, Y. T. ;

Annadi, A. ;

Zhao, Y. L. ;

Barman, A. Roy ;

Dhar, S. ;

Feng, Y. P. ;

Su, H. B. ;

Xiong, G. ;

Venkatesan, T. ;

Ariando .

PHYSICAL REVIEW B, 2011, 84 (16)

[8] Metal-Insulator Transition in SrTiO3-x Thin Films Induced by Frozen-Out Carriers [J].

Liu, Z. Q. ;

Leusink, D. P. ;

Wang, X. ;

Lu, W. M. ;

Gopinadhan, K. ;

Annadi, A. ;

Zhao, Y. L. ;

Huang, X. H. ;

Zeng, S. W. ;

Huang, Z. ;

Srivastava, A. ;

Dhar, S. ;

Venkatesan, T. ;

Ariando .

PHYSICAL REVIEW LETTERS, 2011, 107 (14)

[9] Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor [J].

Nomura, K ;

Ohta, H ;

Ueda, K ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

SCIENCE, 2003, 300 (5623) :1269-1272

[10] Investigation of lateral parameter variations of Al-doped zinc oxide films prepared on glass substrates by rf magnetron sputtering [J].

Song, D ;

Widenborg, P ;

Chin, W ;

Aberle, AG .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 73 (01) :1-20

← 1 2 →