Device and Integration Technology for Silicon Photonic Transmitters

被引:81
作者
Park, Hyundai [1 ]
Sysak, Matthew N. [1 ]
Chen, Hui-Wen [2 ]
Fang, Alexander W. [2 ]
Liang, Di [2 ]
Liao, Ling [1 ]
Koch, Brian R. [1 ]
Bovington, Jock [1 ]
Tang, Yongbo [3 ,4 ]
Wong, Kristi [5 ]
Jacob-Mitos, Matt [5 ]
Jones, Richard [1 ]
Bowers, John E. [2 ]
机构
[1] Intel Corp, Photon Technol Lab, Santa Clara, CA 95054 USA
[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[3] Zhejiang Univ, Hangzhou 310058, Zhejiang, Peoples R China
[4] Royal Inst Technol KTH, SE-10044 Stockholm, Sweden
[5] Aurrion LLC, Santa Barbara, CA 93110 USA
关键词
Optoelectronic devices; photonic integration; semiconductor lasers; silicon photonics; THREADING DISLOCATION DENSITY; WAVE-GUIDE; ELECTROABSORPTION MODULATORS; OPTICAL INTERCONNECTS; EVANESCENT LASERS; ROOM-TEMPERATURE; SI; PHOTODETECTOR; SUBSTRATE; CHIP;
D O I
10.1109/JSTQE.2011.2106112
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.
引用
收藏
页码:671 / 688
页数:18
相关论文
共 53 条
[1]   High performance, waveguide integrated Ge photodetectors [J].
Ahn, Donghwan ;
Hong, Ching-yin ;
Liu, Jifeng ;
Giziewicz, Wojciech ;
Beals, Mark ;
Kimerling, Lionel C. ;
Michel, Jurgen ;
Chen, Jian ;
Kartner, Franz X. .
OPTICS EXPRESS, 2007, 15 (07) :3916-3921
[2]   A fully integrated 20-Gb/s optoelectronic transceiver implemented in a standard 0.13-μm CMOS SOI technology [J].
Analui, Behnam ;
Guckenberger, Drew ;
Kucharski, Daniel ;
Narasimba, Adithyaram .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (12) :2945-2955
[3]  
Bowers J. E., 2007, OPT FIB C OFC AN CA
[4]   Demonstration of a silicon Raman laser [J].
Boyraz, O ;
Jalali, B .
OPTICS EXPRESS, 2004, 12 (21) :5269-5273
[5]  
Chang H.-H., 2010, INT PHOT RES SIL NAN
[6]   25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode [J].
Chen, Hui-Wen ;
Kuo, Ying-hao ;
Bowers, John E. .
OPTICS EXPRESS, 2010, 18 (02) :1070-1075
[7]  
Chu S.K. W., 2009, Proceedings of the 2009 International Conference on Knowledge Management, P1
[8]  
Derrickson D., 1998, FIBER OPTIC TEST MEA, P185
[9]   Electrically pumped hybrid AlGaInAs-silicon evanescent laser [J].
Fang, Alexander W. ;
Park, Hyundai ;
Cohen, Oded ;
Jones, Richard ;
Paniccia, Mario J. ;
Bowers, John E. .
OPTICS EXPRESS, 2006, 14 (20) :9203-9210
[10]   A distributed feedback silicon evanescent laser [J].
Fang, Alexander W. ;
Lively, Erica ;
Kuo, Hao ;
Liang, Di ;
Bowers, John. E. .
OPTICS EXPRESS, 2008, 16 (07) :4413-4419