Comparative study of structural and semiconducting properties of passive films and thermally grown oxides on AISI 304 stainless steel

被引:145
作者
Hakiki, N. E. [1 ]
机构
[1] Univ Oran, Lab Phys Couches Minces & Mat Elect, Fac Sci, Oran 31000, Algeria
关键词
Stainless steel; AES; AFM; EIS; Oxidation; Passive film; SCANNING-TUNNELING-MICROSCOPY; FERRITIC STAINLESS-STEELS; POINT-DEFECT MODEL; ELECTRONIC-STRUCTURE; CHEMICAL-COMPOSITION; IN-SITU; PHOTOELECTROCHEMICAL CHARACTERIZATION; IMPEDANCE MEASUREMENTS; FREQUENCY-DEPENDENCE; AQUEOUS ENVIRONMENTS;
D O I
10.1016/j.corsci.2011.05.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comparative study including structural characterization and semiconducting properties of passive and thermally grown oxides on AISI 304 stainless steel is performed by near field microscopy, Auger electron spectroscopy, capacitance measurements and photoelectrochemistry. This comparative investigation is performed on thermally grown oxides at different temperatures and passive films formed at different potentials. The results obtained by characterization techniques show that the thickness of both oxides increases with increasing formation temperature and potential and allow discussing grain size and surface roughness vs. formation temperature. Capacitance measurements reveal semiconducting behavior of both iron and chromium oxides constituting whole passive and thermal oxides. These results allow extracting and discussing space charge layer thickness and doping densities of iron and chromium oxides in relation with formation conditions. The photocurrent results show a variation of the quantum efficiency with formation temperature and potential and a constant band gap value whatever the nature of the considered film. The variation of the quantum efficiency with applied potential in accordance with Pool-Frenkel model allow extracting and comparing donor densities with those obtained by capacitance measurements. (C) 2011 Elsevier Ltd. All rights reserved.
引用
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页码:2688 / 2699
页数:12
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