Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

被引：14

作者：

Baik, Seung Jae ^{[3
]}

Lim, Koeng Su ^{[3
]}

Choi, Wonsup ^{[1
,2
]}

Yoo, Hyunjun ^{[1
,2
]}

Lee, Jang-Sik ^{[1
,2
]}

Shin, Hyunjung ^{[1
,2
]}

机构：

[1] Kookmin Univ, Ctr Mat & Proc Self Assembly, Seoul 136702, South Korea

[2] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

NANOSCALE | 2011年 / 3卷 / 06期

关键词：

FLOATING-GATE; FLASH MEMORY; NAND FLASH; SILICON; LAYER;

D O I：

10.1039/c1nr10104h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (rho(m)) and the lateral spreading distance (Delta(s)), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

引用

页码：2560 / 2565

页数：6

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