Thickness variations in amorphous As2S3 films induced by electron beam

被引：10
作者：
Nordman, N
Salminen, O
机构：
[1] University of Joensuu, Department of Physics, FIN-80101 Joensuu
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 04期
关键词：
semiconductors; thin films; nanofabrication;
D O I：
10.1016/0038-1098(96)00390-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have found that the thickness of the as evaporated, thermally relaxed As2S3 films decreases when they are exposed to an electron beam. The surface variations depend exponentially on the electron dose. The maximum of the surface contraction is over 20 nm when a film with the thickness of 11 mu m is used. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：241 / 244
页数：4
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