GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator

The GSMBE growth of GaInAsP/InP 1.3-μ m-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-μ m-GaInAsP:Be contacting layers provide a good electrical contact between the III-V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack tip to fifteen 12-nm-thick -1.1% tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8k A/cm(2) and characteristic temperature of 75 K (in the range of 20-80 ° C) are obtained for 600 μ m-long lasers comprising 6 QWs. The possible wavelength extension of TM lasers to 1.55-μ m is also discussed. © 2005 Elsevier B.V. All rights reserved.