Gas-sensitive electrical properties of pure and doped semiconducting Ga2O3 thick films

被引：49
作者：
Frank, J [1 ]
Fleischer, M [1 ]
Meixner, H [1 ]
机构：
[1] Siemens AG, Corp Technol, D-81739 Munich, Germany
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 48卷 / 1-3期
关键词：
gas sensors; metal oxides; gallium oxide; thick film; doping;
D O I：
10.1016/S0925-4005(98)00064-1
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The gas-sensitive electrical properties of pure Ga2O3 thick films are investigated. The influence of doping on these properties has also been studied. SnO2 was used as donator type dopand. It was found that there is an increase in the overall conductivity due to the doping up to two orders of magnitude. Despite this high conductivity, the gas sensitivity remains almost unchanged in all cases. There is no effect of the dopands on the bulk controlled oxygen sensitivity. Pure and doped Ga2O3 thick films have been proved to be reproducible and stable sensor base materials. The result forms the base for the use of screen-printed electrodes or a further reduction of the chip size for a decreased heating power consumption. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：318 / 321
页数：4
相关论文
共 50 条
  • [21] Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films
    Li, Wenhao
    Peng, Yangke
    Wang, Chong
    Zhao, Xiaolong
    Zhi, Yusong
    Yan, Hui
    Li, Linghong
    Li, Peigang
    Yang, Hujiang
    Wu, Zhenping
    Tang, Weihua
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 697 : 388 - 391
  • [22] Investigation of properties of Ta-doped Ga2O3 films prepared with seed layers
    Deng, Jie
    Huang, Haofei
    Tang, Ke
    Wang, Shilin
    Wang, Mengqian
    Liu, Zun
    Gu, Keyun
    Shang, Yi
    Wang, Linjun
    Huang, Jian
    [J]. OPTIK, 2023, 274
  • [23] Effect of thickness on the structural and optical properties of the niobium-doped β-Ga2O3 films
    Zhang, Hao
    Deng, Jinxiang
    Kong, Le
    Pan, Zhiwei
    Bai, Zhiying
    Wang, Jiyou
    [J]. MICRO & NANO LETTERS, 2019, 14 (06) : 701 - 704
  • [24] Ultrawide Bandgap β-Ga2O3 Thin Films: Growths, Properties and Devices
    Rafique, Subrina
    Han, Lu
    Zhao, Hongping
    [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 203 - 216
  • [25] Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template
    Jiao T.
    Li Z.-M.
    Wang Q.
    Dong X.
    Zhang Y.-T.
    Bai S.
    Zhang B.-L.
    Du G.-T.
    [J]. Faguang Xuebao/Chinese Journal of Luminescence, 2020, 41 (03): : 281 - 287
  • [26] Trapping Effects in Si δ-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
    McGlone, Joe F.
    Xia, Zhanbo
    Zhang, Yuewei
    Joishi, Chandan
    Lodha, Saurabh
    Rajan, Siddharth
    Ringel, Steven A.
    Arehart, Aaron R.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) : 1042 - 1045
  • [27] Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
    Kuang, Siliang
    Yang, Zhenni
    Zhang, Ziqi
    Sheng, Ziqian
    Wei, Shenglong
    Chen, Yihong
    Xu, Wenjing
    Yang, Ye
    Chen, Duanyang
    Qi, Hongji
    Zhang, Kelvin H. L.
    [J]. MATERIALS TODAY PHYSICS, 2024, 48
  • [28] Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates
    Okumura, Hironori
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (06)
  • [29] Effect of the doped nitrogen on the optical properties of β-Ga2O3 nanowires
    Chang, Li-Wei
    Lu, Ting-Yu
    Chen, Yan-Li
    Yeh, Jien-Wei
    Shih, Han C.
    [J]. MATERIALS LETTERS, 2011, 65 (14) : 2281 - 2283
  • [30] Room temperature ammonia sensing performances of pure and Sn doped β-Ga2O3
    Pilliadugula, Rekha
    Gopalakrishnan, N.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 135
12345