Microstructure, ferroelectric and piezoelectric properties of Bi4Ti3O12 platelet incorporated 0.36BiScO3-0.64PbTiO3 thick films for high temperature piezoelectric device applications

被引：8

作者：

Cho, Seong Wook ^{[1
,2
]}

Lee, Je In ^{[2
]}

Jeong, Young Hun ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Elect Convergence Mat Div, Jinju Si 52851, Gyeongsangnam D, South Korea

[2] Pusan Natl Univ, Dept Mat Sci & Engn, 2 Busandaehak Ro 63beon Gil, Busan 46241, South Korea

来源：

CERAMICS INTERNATIONAL | 2021年 / 47卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

Microstructure; Ferroelectric properties; Piezoelectric properties; High curie temperature; Bi4Ti3O12; platelet; 0; 36BiScO(3)-0; 64PbTiO(3) thick film; TEMPLATED GRAIN-GROWTH; MORPHOTROPIC PHASE-BOUNDARY; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; CERAMICS; BEHAVIOR;

D O I：

10.1016/j.ceramint.2021.05.096

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bi4Ti3O12 (BiT) platelet incorporated 0.36BiScO3-0.64PbTiO3 (BS-PT) thick films were successfully developed for high temperature piezoelectric device applications. Their microstructure and ferroelectric and piezoelectric properties were systematically investigated to demonstrate the effect of the BiT template. It was found that the incorporation of BiT template was not responsible for textured grain growth of the BS-PT thick films; however, it could result in grain growth and densification of the BS-PT thick films by optimizing the sintering temperature and amount of BiT template. In particular, a 4 wt% BiT-incorporated BS-PT thick film sintered at 1000 degrees C exhibited a pure perovskite structure and excellent piezoelectric properties of d33 (440 pC/N) and kp (53%), despite the presence of micro-pores caused by molten BiT. The BS-PT thick film, exhibiting good ferroelectric characteristics of Pr of 39.4 mu C/cm2 and Ec of 3.0 kV/mm at 1 kHz, also had an extremely high Tc of approximately 402 degrees C. This implies that the BiT platelet incorporated BS-PT thick film is applicable for high temperature piezoelectric devices.

引用

页码：23880 / 23887

页数：8

共 34 条

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