Excimer and femtosecond pulsed laser induced forward transfer process of metal thin film

被引：2

作者：

Yamada, H ^{[1
]}

Sano, T ^{[1
]}

Ohmura, E ^{[1
]}

Miyamoto, I ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS II | 2003年 / 4977卷

关键词：

laser-induced forward transfer (LIFT); thin film patterning; direct writing;

D O I：

10.1117/12.479249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The investigation of laser induced forward transfer (LIFT) process using femtosecond pulsed laser comparing with that using excimer laser is reported. Ni thin film of several hundreds of nanometer thickness, which is deposited on fused silica substrate, was irradiated by single pulse of KrF excimer laser (wavelength: 248nm, pulse width: 30ns) or femtosecond pulsed laser (wavelength: 800nm, pulse width: 120fs), and transferred to a Si acceptor substrate. It is shown that laser beam,profile affected the removal of thin film. It is revealed that adhesion of particles was inhibited using femtosecond pulsed laser in comparison with the case of excimer LIFT process.

引用

页码：426 / 433

页数：8

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