Extreme Temperature Modeling of AlGaN/GaN HEMTs

被引：24

作者：

Albahrani, Sayed Ali ^{[1
]}

Mahajan, Dhawal ^{[2
]}

Kargarrazi, Saleh ^{[3
]}

Schwantuschke, Dirk ^{[1
]}

Gneiting, Thomas ^{[4
]}

Senesky, Debbie G. ^{[3
]}

Khandelwal, Sourabh ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

[2] Macquarie Univ, Dept Engn, Sydney, NSW 2109, Australia

[3] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[4] AdMOS GmbH, D-72636 Frickenhausen, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 02期

关键词：

Compact models; gallium nitride; high electron mobility transistors (HEMTs); high-temperature modeling; physics-based models; semiconductor device measurement; semiconductor device modeling; GAN; PERFORMANCE; NOISE;

D O I：

10.1109/TED.2019.2960573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The industry standard advanced SPICE model (ASM)-GaN compact model has been enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme temperature conditions. In particular, the temperature dependence of the trapping behavior has been considered and a simplifying approximation in the temperature modeling of the saturation voltage in the ASM-GaN model has been relaxed. The enhanced model has been validated by comparing the simulation results of the model with the dc I - V measurement results of a GaN HEMT measured with chuck temperatures ranging from 22 degrees C to 500 degrees C. A detailed description of the modeling approach is presented. The new formulation of the ASM-GaN compact model can be used to simulate the circuits designed for extreme temperature environments.

引用

页码：430 / 437

页数：8

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