Fabrication and characterization of thermally oxidized TiO2 thin films on Si(100) substrates

被引:0
|
作者
Bhatta, Umananda M. [1 ]
Guha, Puspendu [2 ,3 ,4 ]
Kumar, Susheel G. [1 ]
Nagabharana, R. M. [1 ]
机构
[1] Jyothy Inst Technol, Ctr Incubat Innovat Res & Consultancy, Bengaluru 560082, India
[2] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, Orissa, India
[3] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400085, Maharashtra, India
[4] Seoul Natl Univ, RIAM, Coll Engn, 1 Gwanak Ro, Seoul 08826, South Korea
关键词
Thermal oxidation; TiO2; Mixed phase; HRTEM; Moire fringes; TEMPERATURE; ANATASE; RUTILE;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Mixed phase TiO2 is known to have better photocatalytic property as the resulting grain boundaries and interfaces between substrate, anatase and rutile phases play a crucial role in transferring/trapping photogenerated electrons. Here we have grown three different thicknesses (10 nm, 30 nm and 50 nm) of Ti thin films on Si(100) substrate in a sputter coater. Thermal oxidation in air at 600 degrees C for 1 h leads to the formation of mixed phase TiO2 thin films. Surface morphology and crystalline quality of thin film are discussed using XRD, SEM and TEM results. Moire fringes resulting from interfacial strain have been discussed using lattice resolved HRTEM images.
引用
收藏
页码:732 / 736
页数:5
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