Thermoluminescence of aluminum oxide thin films subject to ultraviolet irradiation

被引：13

作者：

Escobar-Alarcón, L ^{[1
]}

Villagrán, E ^{[1
]}

Camps, E ^{[1
]}

Romero, S ^{[1
]}

Villarreal-Barajas, JE ^{[1
]}

González, PR ^{[1
]}

机构：

[1] Inst Nacl Invest Nucl, Dept Fis, Mexico City 11801, DF, Mexico

来源：

THIN SOLID FILMS | 2003年 / 433卷 / 1-2期

关键词：

thermoluminescence; thin film; laser ablation;

D O I：

10.1016/S0040-6090(03)00325-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoluminescence (TL) properties of amorphous aluminum oxide thin films subjected to ultraviolet (UV) irradiation are reported. Aluminum oxide thin films were prepared by laser ablation from an alpha-Al2O3 target using Nd:YAG laser with emission at the fundamental line. Compositional, structural and morphological properties of the obtained thin films as a function of the growth conditions have been studied. Experimental results show that amorphous aluminum oxide thin films with atomic concentrations of aluminum and oxygen close to those of stoichiometric Al2O3 and with splashed particles on its surface were obtained. The TL response as a function of the growth parameters has been investigated in order to improve such response. Thermoluminescence glow curves exhibited one peak centered at 174 degreesC. The results presented in this work, shows that it is possible to obtain materials in thin film form with thickness as low as 150 nm, which exhibits TL response to UV irradiation. These results suggest that aluminum oxide thin films are suitable for detection and monitoring of UV light. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：126 / 130

页数：5

共 12 条

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