XANES and XPS investigations of (TiO2)x(SiO2)1-x: the contribution of final-state relaxation to shifts in absorption and binding energies

被引:50
作者
Gaultois, Michael W. [1 ]
Grosvenor, Andrew P. [1 ]
机构
[1] Univ Saskatchewan, Dept Chem, Saskatoon, SK S7N 5C9, Canada
基金
加拿大自然科学与工程研究理事会; 加拿大健康研究院;
关键词
X-RAY-ABSORPTION; ZIRCONIA-SILICA XEROGELS; TRANSITION-METAL OXIDES; SOL-GEL MATERIALS; TI K-EDGE; ELECTRONIC-STRUCTURE; TITANIA-SILICA; PRE-EDGE; CORE-LEVEL; PHOTOELECTRON-SPECTROSCOPY;
D O I
10.1039/c0jm03464a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The (TiO2)(x)(SiO2)(1-x) system (0 <= x <= 0.33) was synthesized by the sol-gel method and investigated by X-ray absorption near-edge spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS). The use of both hard (Ti K-edge) and soft (Ti L-edge) X-rays provides a useful way to monitor changes in the bulk and surface, respectively, of these amorphous materials. The average CN of both bulk-Ti and surface-Ti increases with greater x in the chemical formula, due to the larger ionic radius of Ti. Comparison of Ti K-and L-edge spectra of annealed samples revealed that Ti atoms at the surface have a higher average CN than in the bulk, likely due to the presence of surface hydroxide and water groups that can coordinate to the Ti centres. The O K-edge, Ti L-edge, and Si L-edge XANES absorption energies showed little to no change with Ti content, while the O 1s, Ti 2p, and Si 2p XPS BEs were found to decrease with increasing Ti content due to nearest-neighbour and next-nearest-neighbour effects, which lead to increased final-state relaxation. The degree of final-state relaxation is more significant than previously believed for these amorphous powders.
引用
收藏
页码:1829 / 1836
页数:8
相关论文
共 69 条
[1]   A SCALE OF ELECTRONEGATIVITY BASED ON ELECTROSTATIC FORCE [J].
ALLRED, AL ;
ROCHOW, EG .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1958, 5 (04) :264-268
[2]   An EXAFS study of silica-titania sol-gels [J].
Anderson, R ;
Mountjoy, G ;
Smith, ME ;
Newport, RJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 232 :72-79
[3]   Thermal stability of the HfO2/SiO2 interface for sub-0.1 μm complementary metal-oxide-semiconductor gate oxide stacks:: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy [J].
Barrett, N ;
Renault, O ;
Damlencourt, JF ;
Martin, F .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) :6362-6369
[4]   Evolution of extraframework iron species in Fe silicalite 1. Effect of Fe content, activation temperature, and interaction with redox agents [J].
Berlier, G ;
Spoto, G ;
Bordiga, S ;
Ricchiardi, G ;
Fisicaro, P ;
Zecchina, A ;
Rossetti, I ;
Selli, E ;
Forni, L ;
Giamello, E ;
Lamberti, C .
JOURNAL OF CATALYSIS, 2002, 208 (01) :64-82
[5]   A RAMAN-STUDY OF TIO2-SIO2 GLASSES PREPARED BY SOL-GEL PROCESSES [J].
BEST, MF ;
CONDRATE, RA .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (08) :994-998
[6]  
Briggs D., 1998, SURFACE ANAL POLYM X
[7]  
BRINKER CJ, 1990, SOL GEL SCI PHYS CHE, P776
[8]   First-principles calculations of X-ray absorption spectra at the K-edge of 3d transition metals: an electronic structure analysis of the pre-edge [J].
Cabaret, Delphine ;
Bordage, Amelie ;
Juhin, Amelie ;
Arfaoui, Mounir ;
Gaudry, Emilie .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (21) :5619-5633
[9]   Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition [J].
Damlencourt, JF ;
Renault, O ;
Samour, D ;
Papon, AM ;
Leroux, C ;
Martin, F ;
Marthon, S ;
Séméria, MN ;
Garros, X .
SOLID-STATE ELECTRONICS, 2003, 47 (10) :1613-1616
[10]   Titania-silica: A model binary oxide catalyst system [J].
Davis, RJ ;
Liu, ZF .
CHEMISTRY OF MATERIALS, 1997, 9 (11) :2311-2324