Low-Voltage, Flexible, and Self-Encapsulated Ultracompact Organic Thin-Film Transistors Based on Nanomembranes

被引:28
作者
Torikai, Kleyton [1 ,2 ]
de Oliveira, Rafael Furlan [1 ]
Starnini de Camargo, Davi H. [1 ,2 ]
Bof Bufon, Carlos C. [1 ,2 ]
机构
[1] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP, Brazil
[2] Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, BR-17033360 Sao Paulo, Brazil
基金
巴西圣保罗研究基金会;
关键词
Organic thin-film transistors (OTFTs); flexible electronics; strained nanomembranes; ultracompact devices; rugged electronics; FIELD-EFFECT TRANSISTORS; COPPER PHTHALOCYANINE; HYBRID NANOMEMBRANES; SOLID FILMS; STABILITY; STORAGE; LIGHT; SEMICONDUCTORS; POLYMER; SENSORS;
D O I
10.1021/acs.nanolett.8b01958
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic thin-film transistors (OTFTs) are an ever-growing subject of research, powering recent technologies such as flexible and wearable electronics. Currently, many studies are being carried out to push forward the state-of-the-art OTFT technology to achieve characteristics that include high carrier mobility, low power consumption, flexibility, and the ability to operate under harsh conditions. Here, we tackle this task by proposing a novel OTFT architecture exploring the so-called rolled-up nano membrane technology to fabricate low-voltage (<2 V), ultra compact OTFTs. As the OTFT gate electrode, we use strained nanomembranes, which allows all transistor components to be rolled-up and confined into a tubular-shaped tridimensional device structure with reduced footprint (ca. 90% of their planar counterpart), without any loss of electrical performance. Such an innovative architecture endows the OTFTs high mechanical flexibility (bending radius of <30 mu m) and robustness-the devices can be reversibly deformed, withstanding more than 500 radial compression/decompression cycles. Additionally, the tubular device design possesses an inherent self-encapsulation characteristic that protects the OTFT active region from degradation by UV-light and hazardous vapors. The reported strategy is also shown to be compatible with different organic semiconductor materials. All of these characteristics contribute to further extending the potentialities of OTFTs, mainly toward rugged electronics.
引用
收藏
页码:5552 / 5561
页数:10
相关论文
共 50 条
[21]   One-Step Fabrication of Hydrophobic Hybrid Gate Dielectrics for Low-Voltage Organic Thin-Film Transistors [J].
Byun, Hye-Ran ;
Ha, Young-Geun .
BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2018, 39 (07) :868-872
[22]   Low-Voltage Operated Organic Thin-Film Transistors With Mobility Exceeding 10 cm2/vs [J].
Li, Shizhang ;
Li, Dehui ;
Qi, Weihao ;
Xu, Meili ;
Wang, Wei .
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (03) :398-401
[23]   Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors [J].
Park, Ji Hoon ;
Lee, Kwang H. ;
Mun, Sung-jin ;
Ko, Gunwoo ;
Heo, Seung Jin ;
Kim, Jae Hoon ;
Kim, Eugene ;
Im, Seongil .
ORGANIC ELECTRONICS, 2010, 11 (10) :1688-1692
[24]   Frohlich polaron effect in flexible low-voltage organic thin-film transistors gated with high-k polymer dielectrics [J].
Guo, Songyang ;
Li, Siying ;
Shen, Tao ;
Tang, Wei ;
Guo, Xiaojun ;
Xin, Juan ;
Jin, Junjun ;
Wei, Huili ;
Wang, Xianbao ;
Li, Jinhua .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (44)
[25]   Low-voltage pentacene thin-film transistors using Hf-based blend gate dielectrics [J].
Oh, Jeong-Do ;
Kim, Dae-Kyu ;
Kim, Jang-Woon ;
Ha, Young-Geun ;
Choi, Jong-Ho .
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (04) :807-814
[26]   Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric [J].
Chang, M. F. ;
Lee, P. T. ;
McAlister, S. P. ;
Chin, Albert .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) :133-135
[27]   High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays [J].
Haldar, Tanumita ;
Wollandt, Tobias ;
Weis, Juergen ;
Zschieschang, Ute ;
Klauk, Hagen ;
Weitz, R. Thomas ;
Burghartz, Joachim N. ;
Geiger, Michael .
SCIENCE ADVANCES, 2023, 9 (01)
[28]   Flexible Low-Voltage IGZO Thin-Film Transistors With Polymer Electret Gate Dielectrics on Paper Substrates [J].
Wang, Xiangyu ;
Gao, Ya ;
Liu, Zehua ;
Luo, Jie ;
Wan, Qing .
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) :224-227
[29]   ZrO2 dielectric-based low-voltage organic thin-film inverters [J].
Oh, Jeong-Do ;
Seo, Hoon-Seok ;
Shin, Eun-Sol ;
Kim, Dae-Kyu ;
Ha, Young-Geun ;
Choi, Jong-Ho .
APPLIED PHYSICS LETTERS, 2013, 103 (06)
[30]   Ultrathin polymer gate buffer layer for air-stable, low-voltage, n-channel organic thin-film transistors [J].
Tanida, Shinji ;
Noda, Kei ;
Kawabata, Hiroshi ;
Matsushige, Kazumi .
POLYMERS FOR ADVANCED TECHNOLOGIES, 2010, 21 (07) :528-532