Microcrystalline Si films deposited from dichlorosilane using RF-PECVD

被引：0
作者：
Guo, LH [1 ]
Kondo, M [1 ]
Matsuda, A [1 ]
机构：
[1] Thin Film Si Solar Cells Super Lab, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期
关键词：
microcrystalline silicon; RF-PECVD; dichlorosilane;
D O I：
10.1016/S0927-0248(00)00201-4
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Microcrystalline silicon has been fabricated using a conventional RF-PECVD method with a dichlorosilane/hydrogen mixture. Better crystallinity, lower hydrogen content and different preferential orientation have been obtained in comparison to those from a silane-hydrogen mixture. It was also found that a small addition of silane to dichlorosilane markedly deteriorates the crystallinity, These differences are discussed in terms of the surface reaction during the growth. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：405 / 412
页数：8
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