Enhancement of GMR in Co/Cu multilayers above the Fermi level

被引:2
作者
Tsymbal, EY
Pettifor, DG
机构
[1] Department of Materials, University of Oxford, Oxford OX1 3PH, Parks Road
关键词
D O I
10.1109/20.539133
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have calculated the giant magnetoresistance (GMR) effect in Co/Cu(100) multilayers for hot electrons. Calculations have been performed within the Kubo formalism assuming spin-independent disorder in the on-site atomic energies within a realistic spd tight-binding model, The results of calculations show the enhancement of GMR in Co/Cu multilayers for hot electrons and predict the existence of the GMR maximum in this system at electron energies about 1eV above the Fermi level.
引用
收藏
页码:4731 / 4733
页数:3
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