Current status of plasma emission electronics: II. Hardware

被引:23
作者
Bugaev, AS
Vizir, AV
Gushenets, VI
Nikolaev, AG
Oks, EM
Yushkov, GY
Burachevsky, YA
Burdovitsin, VA
Osipov, IV
Rempe, NG
机构
[1] Russian Acad Sci, Inst High Current Elect, Siberian Div, Tomsk 634055, Russia
[2] State Univ Control Syst & Radioelect, Tomsk, Russia
关键词
discharge; electron or ion beam; electron or ion source; plasma;
D O I
10.1017/S0263034603212039
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper is devoted to the engineering embodiment of the modern methods for producing charged ion and electron beams by extracting them from the plasma of a discharge. Electron beams use to execute electron-beam welding, annealing. and surface heating of materials and to realize plasmochemical reactions stimulated by fast electrons. Ion beams allow realization of technologies of ion implantation or ion-assisted deposition of coatings thereby opening new prospects for the creation of compounds and alloys by the method that makes it possible to obtain desired parameters and functional properties of the surface. A detailed description is given to the performance and design of devices producing beams of this type: the ion and electron sources being developed at the laboratory of plasma sources of the Institute of High-Current Electronics of the Russian Academy of Sciences and the laboratory of plasma electronics of Tomsk State University of Control Systems and Radioelectronics.
引用
收藏
页码:139 / 156
页数:18
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