C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array

被引：9

作者：

Baek, Rock-Hyun ^{[1
]}

Baek, Chang-Ki ^{[1
,2
]}

Lee, Sang-Hyun ^{[1
]}

Suk, Sung Dae ^{[3
]}

Li, Ming ^{[3
]}

Yeoh, Yun Young ^{[3
]}

Yeo, Kyoung Hwan ^{[3
]}

Kim, Dong-Won ^{[3
]}

Lee, Jeong-Soo ^{[1
,4
]}

Kim, Dae M. ^{[2
,4
]}

Jeong, Yoon-Ha ^{[1
,4
]}

机构：

[1] Pohang Univ Sci & Technol, Pohang 790784, South Korea

[2] Korea Inst Adv Study, Sch Computat Sci, Seoul 130722, South Korea

[3] Samsung Elect Co, Semicond Res & Dev Ctr, Yongin 449711, South Korea

[4] Natl Ctr Nanomat Technol, Pohang 790784, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

C-V curves; gate-all-around (GAA); mobility; nanowire; twin silicon nanowire field effect transistor (TSNWFET); undoped floating channel; CAPACITANCE;

D O I：

10.1109/LED.2010.2092409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented in this letter are the C-V data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The C-V curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using C-V data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance R-sd. These observed data are compared with the data from planar MOS capacitor.

引用

页码：116 / 118

页数：3

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