Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode

被引：240

作者：

Guo, XL ^{[1
]}

Choi, JH ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 3A期

关键词：

pulsed laser reactive deposition; ZnO homostructure; light-emitting diodes (LEDs); electroluminescence (EL); photoluminescence (PL);

D O I：

10.1143/JJAP.40.L177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A transparent ZnO homostructural light-emitting diode (LED) with a structure of Au electrode/p(i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique of N2O plasma-enhanced pulsed laser reactive deposition. The contact between the p(i)-ZnO layer and n-ZnO wafer was found to exhibit nonlinear and rectifying current-voltage (I-V) characteristics. A current injection emission with bluish-white light was clearly observed at room temperature, and its intensity increased with increases in the injected electric current.

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收藏

页码：L177 / L180

页数：4

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