Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si(100) heterojunction solar cells and the effects of interfacial engineering

被引：53

作者：

Dalapati, G. K. ^{[1
]}

Liew, S. L. ^{[1
]}

Wong, A. S. W. ^{[1
]}

Chai, Y. ^{[1
]}

Chiam, S. Y. ^{[1
]}

Chi, D. Z. ^{[1
]}

机构：

[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 01期

关键词：

BETA-FESI2;

D O I：

10.1063/1.3536523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterojunction solar cells with Al-alloyed polycrystalline p-type beta-phase iron disilicide [p-beta-FeSi2(Al)] on n-Si(100) were investigated. The p-beta-FeSi2(Al) was grown by sputter deposition and rapid-thermal annealing. Photocurrent of similar to 1.8 mA/cm(2) and open-circuit voltage of similar to 63 mV were obtained for p-beta-FeSi2(Al)/n-Si(100)/Ti/Al control cells with indium-tin-oxide (ITO) top electrode. Open-circuit voltage increased considerably once thin Al layer was deposited before amorphous-FeSi2(Al) deposition. Furthermore, device performances were found to improve significantly (similar to 5.3 mA/cm(2) and similar to 450 mV) by introducing germanium-nitride electron-blocking layer between ITO and p-beta-FeSi2(Al). The improvement is attributed to the formation of epitaxial Al-containing p(+)-Si at p-beta-FeSi2(Al)/n-Si(100) interface and suppressed back-diffusion of photogenerated electrons into ITO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536523]

引用

页数：3

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