N-Polar InAlN/AlN/GaN MIS-HEMTs

被引：20
作者：
Brown, David F. [1 ]
Nidhi [1 ]
Wu, Feng [2 ]
Keller, Stacia [1 ]
DenBaars, Steven P. [1 ,2 ]
Mishra, Umesh K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期
关键词：
GaN; high-electron-mobility transistor (HEMT); InAlN; metal-insulator-semiconductor (MIS); N-face; ELECTRON-MOBILITY TRANSISTORS; FACE; GAN;
D O I：
10.1109/LED.2010.2050052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
N-polar metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated from a GaN/AlN/InAlN/GaN heterostructure grown by metalorganic chemical vapor deposition on a vicinal sapphire substrate, using Si(3)N(4) as the gate insulator. Hall measurements in van der Pauw geometry on the heterostructure showed a sheet charge density and a mobility of 2.15 x 10(13) cm(-2) and 1135 cm(2) . V(-1) . s(-1), respectively. Resistance measurements revealed anisotropic conductivity with respect to the surface steps induced by the substrate misorientation, and the sheet resistance of the 2-D electron gas was as low as 226 Omega/rectangle in the parallel direction. MIS-HEMTs with a gate length of 0.7 mu m and a source-drain spacing of 2.2 mu m had a peak drain current of 1.47 A/mm and an on-resistance of 1.45 Omega . mm. At a drain bias of 8 V, the current-and power-gain cutoff frequencies were 14 and 25 GHz, respectively.
引用
收藏
页码：800 / 802
页数：3
相关论文
共 20 条
[1]   Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition [J].
Brown, David F. ;
Keller, Stacia ;
Mates, Thomas E. ;
Speck, James S. ;
DenBaars, Steven P. ;
Mishra, Umesh K. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)
[2]   Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition [J].
Brown, David F. ;
Chu, Rongming ;
Keller, Stacia ;
DenBaars, Steven P. ;
Mishra, Umesh K. .
APPLIED PHYSICS LETTERS, 2009, 94 (15)
[3]   High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].
Carlin, JF ;
Ilegems, M .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670
[4]   Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire [J].
Dimitrov, R ;
Murphy, M ;
Smart, J ;
Schaff, W ;
Shealy, JR ;
Eastman, LF ;
Ambacher, O ;
Stutzmann, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3375-3380
[5]   Critical voltage for electrical degradation of GaN high-electron mobility transistors [J].
Joh, Jungwoo ;
del Alamo, Jesus A. .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :287-289
[6]   Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition [J].
Keller, S. ;
Suh, C. S. ;
Chen, Z. ;
Chu, R. ;
Rajan, S. ;
Fichtenbaum, N. A. ;
Furukawa, M. ;
DenBaars, S. P. ;
Speck, J. S. ;
Mishra, U. K. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
[7]   Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition [J].
Keller, S. ;
Fichtenbaum, N. A. ;
Wu, F. ;
Brown, D. ;
Rosales, A. ;
DenBaars, S. P. ;
Speck, J. S. ;
Mishra, U. K. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
[8]   RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate [J].
Kolluri, Seshadri ;
Pei, Yi ;
Keller, Stacia ;
Denbaars, Steven P. ;
Mishra, Umesh K. .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) :584-586
[9]   Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].
Kuzmík, J .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512
[10]   Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state [J].
Lorenz, K. ;
Franco, N. ;
Alves, E. ;
Watson, I. M. ;
Martin, R. W. ;
O'Donnell, K. P. .
PHYSICAL REVIEW LETTERS, 2006, 97 (08)
12