Electron tunneling through an Al2O3 thin film on NiAl(110) in scanning tunneling microscopy

被引：18

作者：

Iwasaki, H ^{[1
]}

Sudoh, K ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 12期

关键词：

STM; electron tunneling; insulator; NiAl; Al2O3; calculation;

D O I：

10.1143/JJAP.41.7496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate electron tunneling for an Al2O3/NiAl(110) structure in scanning tunneling microscopy (STM) by employing a simple and exactly solvable one-dimensional model. The calculation reproduces the essential features of the apparent height of an Al2O3 thin film vs. sample bias curve for an Al2O3(0.5 nm)/NiAl(110) structure studied by Hansen et al. [Surf. Sci. 475 (2001) 96] for the appropriate electron affinity of the Al2O3 film, about 1.35 eV. Origins of fine structures found in the calculated transmission probability vs. sample bias curves are discussed.

引用

页码：7496 / 7500

页数：5

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