Electron tunneling through an Al2O3 thin film on NiAl(110) in scanning tunneling microscopy

被引：18
|
作者：
Iwasaki, H [1 ]
Sudoh, K [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 12期
关键词：
STM; electron tunneling; insulator; NiAl; Al2O3; calculation;
D O I：
10.1143/JJAP.41.7496
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We calculate electron tunneling for an Al2O3/NiAl(110) structure in scanning tunneling microscopy (STM) by employing a simple and exactly solvable one-dimensional model. The calculation reproduces the essential features of the apparent height of an Al2O3 thin film vs. sample bias curve for an Al2O3(0.5 nm)/NiAl(110) structure studied by Hansen et al. [Surf. Sci. 475 (2001) 96] for the appropriate electron affinity of the Al2O3 film, about 1.35 eV. Origins of fine structures found in the calculated transmission probability vs. sample bias curves are discussed.
引用
收藏
页码：7496 / 7500
页数：5
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